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• W1973307890 abstract "Cross-plane thermal conductivity of 800, 458, and 110 nm erbium-doped crystalline yttria (Er+3:Y2O3) films deposited via atomic layer deposition was measured using the 3ω method at room temperature. Thermal conductivity results show 16-fold increase in thermal conductivity from 0.49 W m−1K−1 to 8 W m−1K−1 upon post deposition annealing, partially due to the suppression of the number of the -OH/H2O bonds in the films after annealing. Thermal conductivity of the annealed film was ∼70% lower than undoped bulk single crystal yttria. The cumulative interface thermal resistivity of substrate-Er+3:Y2O3-metal heater was determined to be ∼2.5 × 10−8 m2 K/W." @default.
• W1973307890 created "2016-06-24" @default.
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• W1973307890 date "2013-11-04" @default.
• W1973307890 modified "2023-09-27" @default.
• W1973307890 title "Thermal conductivity of Er⁺³:Y₂O₃ films grown by atomic layer deposition" @default.
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• W1973307890 doi "https://doi.org/10.1063/1.4829138" @default.
• W1973307890 hasPublicationYear "2013" @default.
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