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• W1973320400 abstract "The electrical and optical properties of n‐type and p‐type epitaxial GaAs layers have been studied after MeV implantation of heavy (Xe and Er) ions. All implanted layers were highly resistive immediately after implantation. Annealing to only moderate temperature (725 °C) recovered the as‐grown electrical properties of beryllium‐doped p‐type layers. However, after annealing silicon‐doped n‐type layers, we observe a dramatic change from the as‐grown carrier profiles. After anneal, the silicon‐doped, n‐type layers became conductive but the carrier profiles were markedly different from the as‐grown material. A significant thickness of the implanted portion of the epitaxial layers shows distinct p‐type conductivity after annealing. We have correlated this p‐type activity with a transfer of silicon from the gallium sublattice (SiGa) to the arsenic sublattice (SiAs). The site transfer is viewed to result from the altered thermodynamics governing site occupancy during annealing of Si in GaAs under the unique dama..." @default.
• W1973320400 created "2016-06-24" @default.
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• W1973320400 date "1992-10-01" @default.
• W1973320400 modified "2023-09-26" @default.
• W1973320400 title "Site transfer of Si in GaAs after heavy ion MeV implantation and annealing" @default.
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• W1973320400 doi "https://doi.org/10.1063/1.351518" @default.
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