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- W1973355611 abstract "Abstract Diamond films were grown on Si(111) substrate using different substrate temperatures and feed gases of halogenated methane-hydrogen mixtures by microwave plasma assisted chemical vapor deposition. The deposits were characterized by scanning electron microscopy, Raman spectroscopy, X-ray diffraction and transmission electron microscopy. SEM measurements showed that a well crystallized and dense nucleated diamond deposit can be more easily synthesized using halogenated methane as the feed gas than methane. The Raman spectra showed the characteristic 1331 cm−1 crystalline diamond peak and a small broad 1475 cm−1 graphitic or amorphous carbon peak. XRD measurements revealed the crystallinity of the diamond deposits as a function of deposition temperature. The majority of diamond crystals have a very high defect density comprised of {111} twins, {111} stackingsand dislocations. Fivefold multiply twinned particles have also been examined and the density of defects in these particles is generally high; however, a dramatic reduction in the defect density near the twin boundaries was observed. Using a (CHCl 3 + CH 4 ) H 2 mixture, which is a suitable gas for low-temperature diamond formation, uniform and dense diamond films were obtained by conventional cavity-mode microwave assisted CVD." @default.
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- W1973355611 date "1994-07-01" @default.
- W1973355611 modified "2023-10-16" @default.
- W1973355611 title "Characterization of diamond synthesized with halogenated methane in a microwave discharge" @default.
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- W1973355611 doi "https://doi.org/10.1016/0254-0584(94)90002-7" @default.
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