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- W1973377258 abstract "Microstructural development in chemically vapor-deposited (CVD) high-purity beta-SiC during neutron and self-ion irradiation at elevated temperatures was studied. The CVD SiC samples were examined by transmission electron microscopy following neutron irradiation to 4.5–7.7 × 10 25 n/m 2 ( E > 0.1 MeV) at 300 and 800 °C and 5.1 MeV Si 2+ ion irradiation up to ∼200 dpa at 600–1400 °C. The evolution of various irradiation-produced defects including black spot defects, dislocation loops , network dislocations, and cavities was characterized as a function of irradiation temperature and fluence . It was demonstrated that the black spot defects and small dislocation loops continue to dominate at relatively low temperatures (<∼800 °C), whereas they grow into Frank faulted loops and finally develop into dislocation networks at a higher temperature (1400 °C). Substantial cavity formation on grain boundaries and stacking faults was confirmed after ion irradiation at 1400 °C. These observations were discussed in relation with the known irradiation phenomena in SiC, such as low temperature swelling and cavity swelling." @default.
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- W1973377258 date "2006-06-01" @default.
- W1973377258 modified "2023-10-16" @default.
- W1973377258 title "Microstructural development in cubic silicon carbide during irradiation at elevated temperatures" @default.
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- W1973377258 doi "https://doi.org/10.1016/j.jnucmat.2006.02.007" @default.
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