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• W1973399019 abstract "Substoichiometric tungsten oxide films were deposited on Si substrates by heating metallic filaments at temperatures of 920, 1020 and 1070 K at a total pressure of 133 Pa and H2 partial pressure of 13.3 Pa at or near room temperature. Due to their substoichiometry and deposition method samples were named hot-wire WOx (hwWOx) films (x < 3). No optical gap was identified by optical (spectroscopic ellipsometry) measurements made on hwWOx films and resistivity was found to increase with temperature. This metallic character of hwWOx films was attributed to substoichiometry, which causes the creation of electronic states within the band gap and shifts the Fermi level in the conduction band. The growth of hwWOx films occurred from substoichiometric WOx vapors produced in two steps: a) by the H2 reduction of the superficial (native) oxide of the heated tungsten filament to WOx and b) evaporation of the last. Vapors were composed of WOx particles with dimensions of 5–6 nm or clusters of such particles and condensing on the cold substrate form hwWOx films. The substoichiometry of hwWOx samples was related to the presence of many unsaturated bonds in them, which re-constructed easily upon thermal annealing above 420 K or even after exposure to the electron beam of the transmission electron microscope leading to the formation of crystallites with dimensions of 5 nm within samples." @default.
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• W1973399019 date "2012-02-01" @default.
• W1973399019 modified "2023-10-01" @default.
• W1973399019 title "Substoichiometric hot-wire WOx films deposited in reducing environment" @default.
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• W1973399019 doi "https://doi.org/10.1016/j.tsf.2011.12.070" @default.
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