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• W1973425012 endingPage "10668" @default.
• W1973425012 startingPage "10655" @default.
• W1973425012 abstract "The behavior of interfaces formed by growing thin Tm and Yb films on p- and n-type GaAs(110) substrates at room temperature was investigated by photoemission from As 3d, Ga 3d, and metal 4f core levels. At metal coverages ensuremath{Theta}1 Ar{}, the core-level binding energies of substrate atoms are found to be shifted to higher and lower values, respectively, for p- and n-type GaAs; this observation is interpreted as a consequence of band bending due to defect states. In addition, photoemission signals from chemically reacted products at the interface are observed, which grow in intensity with metal coverage. In the coverage range 2ensuremath{Theta}2.8 Ar{} for Tm and 2.55.6 Ar{} for Yb, a further change in band bending occurs, as reflected in additional shifts of all core levels towards lower binding energies. This observation, together with the strongly increasing density of states at the Fermi level around this coverage, indicates that the Schottky barrier is not established until the overlayer assumes metallic character. These observations are interpreted within the concept of metal-induced gap states defining the final Fermi-level position. From the observed variations with metal coverage of binding energies and relative intensities of photoemission signals from the reacted layer, a structure model is proposed for rare-earth/GaAs(110) interfaces that includes a separation of As and Ga atoms into As-rich and Ga-rich rare-earth compounds in the reacted zone. For Tm and Yb interfaces, respectively, the 4f core levels of the reaction products are found to be shifted in opposite directions from the binding energies of the elemental rare-earth metals. Employing thermochemical arguments, this behavior is explained as a consequence of the different valences of Tm (3+) and Yb (2+) in these compounds. At coverages around 20 Ar{} for Tm and 30 Ar{} for Yb, elemental rare-earth films with rough surfaces are formed, as revealed by a large surface shift of the 4f photoemission lines in the case of Yb and a partial surface valence transition in the case of Tm." @default.
• W1973425012 created "2016-06-24" @default.
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• W1973425012 date "1988-11-15" @default.
• W1973425012 modified "2023-09-23" @default.
• W1973425012 title "Photoemission study of reactive rare-earth/semiconductor interfaces: Tm/GaAs(110) and Yb/GaAs(110)" @default.
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• W1973425012 doi "https://doi.org/10.1103/physrevb.38.10655" @default.
• W1973425012 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/9945921" @default.
• W1973425012 hasPublicationYear "1988" @default.
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