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- W1973441566 abstract "Ridley's theory (1978) of the multiphonon capture rate at defect centres in semiconductors is compared with the low-temperature experimental results of Henry and Lang (1977) for the B centre in GaAs more critically than hitherto. It is found that the Huang-Rhys factor S=3.0 gives a good fit to both the magnitude and the temperature dependence of the capture cross-section at low temperatures. This is in contrast to Ridley's result of S=1 that only accounts for the temperature variation, albeit for a wider temperature range; the magnitude of the cross-section with S=1 is underestimated by some eight orders of magnitude. In this paper S is determined from an experimental capture cross-section at the lowest possible temperature. This gives a reliable value of S because the capture cross-section varies approximately as Sp, where p is the depth of the level in units of the zone-centre optical phonon energy and is equal to 20 for the B centre in GaAs. It is pointed out that a value of S so derived could be used not only as a means of identifying a deep level but also could be used to help analyse other experiments on the same centre involving electron-phonon coupling, e.g. measurement of photoionisation spectra." @default.
- W1973441566 created "2016-06-24" @default.
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- W1973441566 date "1979-11-28" @default.
- W1973441566 modified "2023-09-26" @default.
- W1973441566 title "Electron capture by multiphonon emission at the B centre in gallium arsenide" @default.
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- W1973441566 doi "https://doi.org/10.1088/0022-3719/12/22/023" @default.
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