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- W1973445974 abstract "The native oxide removal, surface termination, and stoichiometry of InGaAs(1 0 0) surfaces using liquid and gas phase HF/H2O etching were studied using X-ray photoelectron spectroscopy. Oxide removal in liquid phase HF stopped at the As layer, producing either elemental or H-terminated As. The surface oxidized upon air exposure, forming a 4.8 Å As2O3 layer on an As rich InGaAs sub-surface (17% In, 16% Ga, 66% As). A sub atmospheric gas phase HF/H2O process (100 Torr, 29 °C, 0.5 min) completely removed As2O3 and produced mainly In and Ga fluorides, since As fluoride is volatile at these experimental conditions. Once enough F accumulated on the surface, the water sticking probability decreased and the etching reaction proceeded at a much lower rate. The highest oxide removal (4.2 Å residual oxide) was achieved after 5 min of etching. As2O3 and As2O5 were completely removed and considerably more InF3 and GaF3 were produced. The surface contained a group III-fluoride rich overlayer (34% In, 36% Ga) on a slightly As rich bulk (21% In, 21% Ga, and 58% As). The As rich InGaAs sub-surface produced with both liquid and the longer gas phase HF treatments is intrinsic to HF-InGaAs chemistry, although the oxide removal mechanism is likely different." @default.
- W1973445974 created "2016-06-24" @default.
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- W1973445974 date "2010-11-01" @default.
- W1973445974 modified "2023-09-27" @default.
- W1973445974 title "In0.53Ga0.47As(100) native oxide removal by liquid and gas phase HF/H2O chemistries" @default.
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- W1973445974 doi "https://doi.org/10.1016/j.mee.2009.12.070" @default.
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