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• W1973456502 abstract "Abstract The dependences on phosphorus doping of ESR, conductivity, X-ray diffraction and hydrogen vibrational spectra have been investigated for microcrystalline Si films prepared by a new glow-discharge decomposition method where the substrate is placed in a heated plasma gas. The results are compared with those for amorphous Si : H and polycrystalline Si films. A higher deposition rate of 80–160 Å min−1 and larger crystallite sizes of 150–250 Å have been found than in other methods of preparation. The morphology of an amorphous phase in the microcrystalline film is different from that in an amorphous Si : H film, and the width of the conduction band tail-states in the amorphous phase portion is considerably narrower. A large conductivity in the P-doped microcrystalline films is interpreted as arising from an enhanced upward shift of the Fermi level permitted by the reduction in the tail-state width. A strong correlation between the conductivity and hydrogen bonded in SiH2 groups was found, the conductivity being smaller in films with high hydrogen contents. The conductivity of microcrystalline films with low hydrogen contents is analysed in terms of a random mixture of crystallites and amorphous phase regions. From ESR measurements, the electron mobility in the crystallites was found to be similar to that in single-crystal Si." @default.
• W1973456502 created "2016-06-24" @default.
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• W1973456502 date "1983-11-01" @default.
• W1973456502 modified "2023-09-25" @default.
• W1973456502 title "ESR and electrical properties of P-doped microcrystalline Si" @default.
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• W1973456502 doi "https://doi.org/10.1080/13642818308228569" @default.
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