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- W1973519934 abstract "Improvement in the resistive switching characteristics using TiN bottom electrode on TaO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /W structure as compared to W electrode is reported. The thickness of TaO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> layer is confirmed by high-resolution TEM image. The memory device with TiN electrode has shown formation-free repeatable bipolar resistive switching with resistance ratio of >30. Besides, improved resistive switching performance in terms of lower operation current (50 vs. 300 μA), Longer read endurance (>10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> cycles), 85°C data retention of >10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> seconds and device yield of >90% is also achieved for TiN electrode. The TiN/TaO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> interface is playing a key role in controlling the oxygen vacancy defects which in turn control the formation/dissolution of conducting filament." @default.
- W1973519934 created "2016-06-24" @default.
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- W1973519934 date "2013-01-01" @default.
- W1973519934 modified "2023-10-16" @default.
- W1973519934 title "Improved resistance memory characteristics and switching mechanism using TiN electrode on TaO<inf>x</inf>/W structure" @default.
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- W1973519934 doi "https://doi.org/10.1109/inec.2013.6465977" @default.
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