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- W1973546670 abstract "Rapid thermal chemical vapor deposition (RT-CVD) technology is strategically important for deep submicron ULSI manufacturing because of trends towards reduced thermal budget and tightened process control requirements on large diameter Si wafers, and has thus received considerable attention. In this paper, we will review the significant benefits provided by a novel in-situ multi-processing RT-CVD for IC manufacturing and the considerable progress made in developing RT-CVD as a integrated processing module capable of meeting the stringent requirements of ULSI device fabrication." @default.
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- W1973546670 date "1994-02-15" @default.
- W1973546670 modified "2023-09-23" @default.
- W1973546670 title "Recent developments in RT-CVD technology for ULSI material processing and device fabrication: an overview" @default.
- W1973546670 doi "https://doi.org/10.1117/12.167329" @default.
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