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- W1973552364 abstract "Self-assembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on n+-GaAs substrates, capped between 0.4μm thick n-type GaAs layers with electron concentration of 1×1016cm−3. The effect of rapid thermal annealing at 700°C for 60s on the noise properties of the structure has been investigated using Au∕n-GaAs Schottky diodes as test devices. In the reference sample without containing QDs, the noise spectra show a generation-recombination (g-r) noise behavior due to a discrete energy level located about 0.51eV below the conduction band edge. This trap is ascribed to the M4 (or EL3) trap in GaAs MBE layers, related to a chemical impurity-native defect complex. In the structure with embedded QDs, the observed g-r noise spectra are due to a midgap trap level ascribed to the EL2 trap in GaAs, which is related to the InAs QDs dissolution due to the thermal treatment." @default.
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- W1973552364 date "2007-09-01" @default.
- W1973552364 modified "2023-10-17" @default.
- W1973552364 title "Effect of rapid thermal annealing on the noise properties of InAs∕GaAs quantum dot structures" @default.
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- W1973552364 doi "https://doi.org/10.1063/1.2775536" @default.
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