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- W1973567406 abstract "Presently the most prominent silicon materials considered for silicon-on-insulator (SOI) technologies are SIMOX (separation by implanted oxygen) and bonded SOI. The present paper will review recent developments for these two types of approaches for SOI materials with special emphasis on the progress in obtaining ultra thin bonded SOI layers by local plasma etching or an etch-back procedure involving stress compensated boron-germanium doped etch-stop layers." @default.
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- W1973567406 date "1995-06-01" @default.
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- W1973567406 title "Properties of SIMOX and bonded SOI material" @default.
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- W1973567406 doi "https://doi.org/10.1016/0167-9317(95)00083-k" @default.
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