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• W1973611619 abstract "Plasma enhanced chemical vapor deposition was used to deposit hydrogenated silicon nitride (SiNx:H) thin films using two gas mixtures: SiH4/NH3 AND SiH4/N2. NH3 and N2 gas flowrates were the only deposition parameters varied. Surface morphology of all the samples was observed with the help of Atomic force microscopy (AFM). Fourier Transform Infrared spectroscopy (FTIR) was utilized to examine the chemical bonding and determine the Total bonded hydrogen (TBH) content of the films. Ammonia deposited films were found smoother than the nitrogen deposited films. Surface roughness in both kinds of films was found to be directly proportional to the hydrogen content (TBH). Also X-Ray diffraction employed has shown the presence of few silicon nitride grains ((200), (400) and (221)) in all the samples." @default.
• W1973611619 created "2016-06-24" @default.
• W1973611619 creator A5020935392 @default.
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• W1973611619 date "2010-01-01" @default.
• W1973611619 modified "2023-09-24" @default.
• W1973611619 title "Hydrogen dependent surface morphology study of plasma deposited SiN<inf>x</inf>:H films for two Gas Systems SiH<inf>4</inf>/NH<inf>3</inf> and SiH<inf>4</inf>/N<inf>2</inf>" @default.
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• W1973611619 doi "https://doi.org/10.1109/inec.2010.5424759" @default.
• W1973611619 hasPublicationYear "2010" @default.
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