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• W1973660938 abstract "EUV lithography with 13.5 nm exposure wavelength, because of its excellent resolution, is a leading candidatefor the next-generation lithography for 16 nm half pitch (hp) node devices, and beyond. High-sensitivity EUV maskpattern defect detection is one of the major issues to realize device fabrication with EUV lithography. In order toachieve inspection sensitivity and attainability for 1X node, a projection electron microscopy (PEM) system isemployed that enables us to do high-speed/ high-resolution inspection that is not possible with the conventional DUV orEB inspection systems. By selecting a higher electron energy in imaging by using Electron Optics (EO) exposure, andby applying a newly designed model to a basic PEM optics model, we have minimized the aberration in imaging thatoccurs when working with EO; and we have improved the related transmittance of such a system. Experimental resultsby showing designs for the improved transmittance were obtained by making electron throughput measurement. Toguarantee the quality of the 16 nm node EUV mask, corresponding sized programmed defects on masks were designed,and a PEM system for defect detection was evaluated by using the developed EO." @default.
• W1973660938 created "2016-06-24" @default.
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• W1973660938 date "2013-06-28" @default.
• W1973660938 modified "2023-09-23" @default.
• W1973660938 title "Pattern inspection performance of novel Projection Electron Microscopy (PEM) on EUV masks" @default.
• W1973660938 doi "https://doi.org/10.1117/12.2030653" @default.
• W1973660938 hasPublicationYear "2013" @default.
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