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- W1973670673 abstract "Low-resistance Ohmic contacts are essential for the fabrication of electrical devices. While low contact resistance has been achieved to p -type layers or n -type layers separately, contacts are likely to degrade when both types need to be integrated into a single fabrication process, in particular when prior mesa etching is required. We present a solution to the problem, resulting in low-resistance Ohmic contacts on n -type GaN layers without post-deposition thermal anneal, while maintaining the quality of typical p -type contacts. We implement an integrated process for both, n - and p -contacts, involving an oxygen pretreatment to fabricate light emitting diodes with lower series resistance in the contacts and lower voltage drop at high current when compared to separately optimized contacts." @default.
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- W1973670673 date "2011-09-01" @default.
- W1973670673 modified "2023-09-22" @default.
- W1973670673 title "INTEGRATION OF N- AND P-CONTACTS TO GaN-BASED LIGHT EMITTING DIODES" @default.
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- W1973670673 doi "https://doi.org/10.1142/s0129156411006817" @default.
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