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• W1973674913 abstract "Pt/Au Schottky contacts were fabricated on modulation-doped Al0.22GaN0.78/GaN heterostructures. Some different surface treatments were used before the deposition of the metal contacts to prevent the formation of the native oxide layer on the samples’ surfaces. Comparing the barrier height and the ideal factor of the Schottky contacts, we found that the treatment of the boiling (NH4)2S solution can remove the native oxide layer effectively. Detailed X-ray photoelectron spectroscopy measurements were also made to investigate the chemical reactions on the surface of samples after different treatments." @default.
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• W1973674913 date "2003-07-01" @default.
• W1973674913 modified "2023-10-16" @default.
• W1973674913 title "Effect of surface treatments on Schottky contact on n-AlxGa1−xN/GaN heterostructures" @default.
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• W1973674913 doi "https://doi.org/10.1016/s0925-3467(03)00074-0" @default.
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