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• W1973722204 abstract "We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As - GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin." @default.
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• W1973722204 date "2003-04-02" @default.
• W1973722204 modified "2023-09-27" @default.
• W1973722204 title "Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films" @default.
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• W1973722204 doi "https://doi.org/10.1063/1.1566097" @default.
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