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- W1973731502 abstract "The Joyce-Dixon approximation for the Fermi energy in a degenerate semiconductor is used to obtain rapidly converging series expansions for both the potential and the electric field for degenerate accumulation layers in semiconductors, as functions of the electron concentration. The expressions are valid for electron concentrations up to about 20 times the effective density of states. The approximation is applied to Schottky barriers on degenerate semiconductors, where it leads to an increase in the value of the Gummel-Scharfetter correction in the C-V relation for Schottky barriers. A detailed quantitative treatment is given for the barrier lowering in abrupt n-N heterojunctions with increased reverse bias. Both barrier lowering and reverse bias are given as closed-form parametric expressions, with the electron concentration at the bottom of the heterojunction notch as the independent variable." @default.
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- W1973731502 date "1981-02-01" @default.
- W1973731502 modified "2023-10-16" @default.
- W1973731502 title "Analytic approximations for degenerate accumulation layers in semiconductors, with applications to barrier lowering in isotype heterojunctions" @default.
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- W1973731502 doi "https://doi.org/10.1063/1.328770" @default.
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