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- W1973753166 abstract "Transmission electron microscope (TEM) analysis was performed for the anti-surfactant (AS)-treated interface of GaN thin films deposited by the metal-organic vapor-phase epitaxy method. It was revealed that the AS-treatment with supplying a gas-source of tetraethyl-silicon (TESi) forms an interface layer of about 1 nm thickness. The electron diffraction pattern for the interface layer shows a streak along [0001] at about one-thrid positions between hkil =0000 and 1210. The point analysis of energy dispersive X-ray spectroscopy (EDS) confirmed that the interface layer contains a certain amount of silicon. These results revealed that the interface layer is a crystalline phase of silicon compound. The effect of the interface layer on the morphology of threading dislocations was also discussed in terms of coherency of the interface layer with GaN." @default.
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- W1973753166 date "2007-01-01" @default.
- W1973753166 modified "2023-10-16" @default.
- W1973753166 title "TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template" @default.
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- W1973753166 doi "https://doi.org/10.1016/j.jcrysgro.2006.10.188" @default.
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