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• W1973758055 abstract "Low-temperature (LT) AlN interlayers can be applied to reduce the tensile stress and cracks in thick GaN layers on Si. Here, we present an X-ray diffractometry study revealing the influence of metalorganic chemical vapor phase deposition parameters on stress relaxation by these interlayers. The degree of stress relaxation is observed to strongly depend on interlayer deposition temperature. At low temperatures, LT-AlN grows incoherently on GaN, which leads to a temperature-dependent partial decoupling of stress and also to a decoupling of the GaN layers separated by the interlayers. We further observe a Ga incorporation into the LT-AlN interlayers dependent on growth temperature and Al-content of AlGaN layers grown on top of LT-AlN layers. By introducing LT-AlN interlayers a GaN X-ray diffractometry rocking curve FWHM of the (0 0 0 2) reflection of 400 arcsec for 3 μm thick crack-free layers is achieved." @default.
• W1973758055 created "2016-06-24" @default.
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• W1973758055 date "2003-02-01" @default.
• W1973758055 modified "2023-10-09" @default.
• W1973758055 title "Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers" @default.
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• W1973758055 doi "https://doi.org/10.1016/s0022-0248(02)01880-8" @default.
• W1973758055 hasPublicationYear "2003" @default.
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