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• W1973768194 startingPage "L1692" @default.
• W1973768194 abstract "Si oxynitride dielectric films having good electrical and structural characteristics were deposited at 130° C by a sputtering technique using an electron cyclotron resonance plasma. This was demonstrated by studying breakdown characteristics, chemical etch rate, refractive index, and chemical bonding characteristics as a function of the flow rate ratio of O 2 to N 2 . At the optimum condition, the oxynitride films had refractive indexes in the range 1.5–1.6 and infra-red peak positions in the range 955–1035 cm -1 , and showed a high breakdown field of 12–13 MV/cm. It was found that the breakdown field and charge trapping of the oxynitride films were superior to those of thermally grown oxide. These improvements are interpreted as being due to a suitable N-atom incorporation into the films during the deposition process, enabling the formation of a partial O–Si–N amorphous network." @default.
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• W1973768194 date "1997-12-01" @default.
• W1973768194 modified "2023-09-25" @default.
• W1973768194 title "Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by Using a Sputtering-Type Electron Cyclotron Resonance Plasma" @default.
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• W1973768194 doi "https://doi.org/10.1143/jjap.36.l1692" @default.
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