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• W1973790063 abstract "The Schottky-barrier height (SBH) of an epitaxial ${mathrm{NiSi}}_{2}$ layer grown on Si(100) is shown to depend critically on the morphology of the interface. Single-crystal, uniform, planar ${mathrm{NiSi}}_{2}$Si(100) layers have a much lower (n-type) SBH than that of interfaces which are made up of inclined 〈111〉 facets. Interfaces with both planar 〈100〉 sections and inclined 〈111〉 sections exhibit electrical behavior expected of a spatially inhomogeneous SB. We suggest that interface atomic structure determines SBH formation." @default.
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• W1973790063 date "1991-01-07" @default.
• W1973790063 modified "2023-09-25" @default.
• W1973790063 title "Schottky-barrier inhomogeneity at epitaxial<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant=normal>NiSi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>interfaces on Si(100)" @default.
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• W1973790063 doi "https://doi.org/10.1103/physrevlett.66.72" @default.
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