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- W1974016780 abstract "Abstract Electron spin resonance (ESR) in combination with electrical analysis indicates basic differences in the defect properties of the (1 0 0)Ge/GeOxNy/HfO2 and (1 0 0)Ge/GeO2 interfaces with the seemingly isomorphic interfaces of (1 0 0)Si with the HfO2 and SiO2. ESR fails to reveal dangling bond centers associated with Ge crystal surface atoms—only paramagnetic defects originating from the near-interfacial Ge oxide or Ge (oxy)nitride layers are observed. In contrast to the amphoteric Pb-type centers (Si dangling bonds) commonly observed at the silicon/insulator interfaces, the major component of the Ge/insulator interface trap spectrum comes from slow acceptor states which appear resistant to passivation by hydrogen and show no immediate correlation with the observed paramagnetic centers." @default.
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- W1974016780 date "2005-12-01" @default.
- W1974016780 modified "2023-10-16" @default.
- W1974016780 title "Nature of the interface of (100)Ge/insulator structures with ultrathin HfO2 and GeOx(Ny) layers probed by electron spin resonance" @default.
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- W1974016780 doi "https://doi.org/10.1016/j.mseb.2005.08.035" @default.
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