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• W1974044943 endingPage "1997" @default.
• W1974044943 startingPage "1995" @default.
• W1974044943 abstract "A broad photoluminescence (PL) around 2.6–2.9 eV is known to appear in hydrogenated silicon oxynitride. Although its origin was reported to be Si–N bonds, it is not so clear since the material contains hydrogen. In the present research, we have confirmed that the same PL appears in silicon oxynitride grown by nitriding of silicon dioxide. The depth profile of the PL intensity agrees with that of the nitrogen concentration. Furthermore, the emission spectrum, excitation spectrum, and decay constant of this PL agree with those of the PL observed in silicon nitride. Based on these results and theoretical discussion, the origin of the 2.6–2.9 eV PL is estimated to be Si–N bonds." @default.
• W1974044943 created "2016-06-24" @default.
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• W1974044943 date "2001-09-24" @default.
• W1974044943 modified "2023-09-23" @default.
• W1974044943 title "Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride" @default.
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• W1974044943 doi "https://doi.org/10.1063/1.1405806" @default.
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