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- W1974159394 abstract "A novel 8-transistor (8T) static random access memory cell with improved data stability in subthreshold operation is designed. The proposed single-ended with dynamic feedback control 8T static RAM (SRAM) cell enhances the static noise margin (SNM) for ultralow power supply. It achieves write SNM of $1.4times $ and $1.28times $ as that of isoarea 6T and read-decoupled 8T (RD-8T), respectively, at 300 mV. The standard deviation of write SNM for 8T cell is reduced to $0.4times $ and $0.56times $ as that for 6T and RD-8T, respectively. It also possesses another striking feature of high read SNM $sim 2.33times $ , $1.23times $ , and $0.89times $ as that of 5T, 6T, and RD-8T, respectively. The cell has hold SNM of $1.43times $ , $1.23times $ , and $1.05times $ as that of 5T, 6T, and RD-8T, respectively. The write time is 71% lesser than that of single-ended asymmetrical 8T cell. The proposed 8T consumes less write power $0.72times $ , $0.6times $ , and $0.85times $ as that of 5T, 6T, and isoarea RD-8T, respectively. The read power is $0.49times $ of 5T, $0.48times $ of 6T, and $0.64times $ of RD-8T. The power/energy consumption of 1-kb 8T SRAM array during read and write operations is $0.43times $ and $0.34times $ , respectively, of 1-kb 6T array. These features enable ultralow power applications of 8T." @default.
- W1974159394 created "2016-06-24" @default.
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- W1974159394 date "2016-01-01" @default.
- W1974159394 modified "2023-10-02" @default.
- W1974159394 title "A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell" @default.
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- W1974159394 doi "https://doi.org/10.1109/tvlsi.2015.2389891" @default.
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