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- W1974291244 abstract "Variations in the surface morphology of GaN grown by MOVPE on (0001) sapphire are studied, using various growth parameters, to obtain continuous films with flat surfaces. To clarify the relationship between surface morphology and growth conditions, the surface morphologies of GaN grown directly on sapphire are classified by their growth modes and hillock shapes. The GaN growth mechanism is investigated to understand the observed morphologies. The difficulty in growing GaN directly on sapphire is shown to originate from the tradeoff between the conditions suitable for continuous film growth and those for stabilizing the GaN (0001) surface. The results presented also provide important information about the 2-step growth technique. This technique utilizes low-temperature-grown buffer layers, and is a key technique for improving GaN films. The conditions described here for stabilizing the (0001) surface serve as guidelines for expanding the range of growth conditions available for use with the 2-step growth technique." @default.
- W1974291244 created "2016-06-24" @default.
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- W1974291244 date "1993-03-01" @default.
- W1974291244 modified "2023-09-25" @default.
- W1974291244 title "Surface morphology of MOVPE-grown GaN on (0001) sapphire" @default.
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- W1974291244 doi "https://doi.org/10.1016/0022-0248(93)90436-z" @default.
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