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- W1974298051 abstract "p -type InGaAs∕Si heterojunctions were fabricated through a wafer fusion bonding process. The relative band alignment between the two materials at the heterointerface was determined using current-voltage (I-V) measurements and applying thermionic emission-diffusion theory. The valence and conduction band discontinuities for the InGaAs∕Si interface were determined to be 0.48 and −0.1eV, respectively, indicating a type-II band alignment." @default.
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- W1974298051 date "2007-05-28" @default.
- W1974298051 modified "2023-10-14" @default.
- W1974298051 title "Band discontinuity measurements of the wafer bonded InGaAs∕Si heterojunction" @default.
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- W1974298051 doi "https://doi.org/10.1063/1.2745254" @default.
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