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- W1974333006 abstract "A rapid melt growth process for forming interband Esaki tunnel junctions on Ge is shown. The process uses a phosphorus spin-on diffusant and rapid thermal annealing to form the side of the junction, while for the side, a deposited aluminum film serves both as an acceptor dopant source and a melt for epitaxial regrowth of . The current density in these junctions depends strongly on the peak temperature of the melt and ranges between a few to over . The use of a silicon nitride microcrucible improves the surface morphology by confining the melt. Record forward peak current density of and reverse interband tunnel current density of is achieved at a peak temperature of approximately ." @default.
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- W1974333006 date "2007-01-01" @default.
- W1974333006 modified "2023-09-25" @default.
- W1974333006 title "Rapid Melt Growth of Germanium Tunnel Junctions" @default.
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- W1974333006 doi "https://doi.org/10.1149/1.2728734" @default.
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