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• W1974421866 abstract "We investigated low-hydrogen SiN films prepared by a low temperature (350 degrees C) PECVD method. The impact of SiH(4)/N(2) flow ratio and radio frequency power on the hydrogen content in the SiN films was studied. In this work, we demonstrated a low-loss sub-micron SiN waveguide by using the corresponding optimal SiN films. The propagation loss was found to be as low as -2.1+/-0.2 dB/cm at 1550 nm with waveguide cross-section of 700 nm x 400 nm. The results suggest that the SiN films grown by PECVD with low hydrogen can be used in photonics integrated circuits for new generation communications applications." @default.
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• W1974421866 date "2008-12-02" @default.
• W1974421866 modified "2023-10-16" @default.
• W1974421866 title "Low propagation loss SiN optical waveguide prepared by optimal low-hydrogen module" @default.
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• W1974421866 doi "https://doi.org/10.1364/oe.16.020809" @default.
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