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• W1974429162 abstract "This paper reports on the current status of laser-assisted epitaxy with III-V materials. This technique permits in situ selective-area growth of fine grating patterns whose pitch is less than 1 mu m pitch. Laser-assisted epitaxy has also been used to fabricate a locally grown FET and a multiple-wavelength laser diode array with a low threshold current density. Laser irradiation enhances the film growth rate at low substrate temperatures for all the III-V binary materials, and the enhancement mechanism described is based on various experimental results. The compositions of InGaAs and InGaAsP can be modified by Ar ion laser irradiation at high temperature and this growth technique is applied to MQW lasers. These successful device applications offer hope for the fabrication of advanced devices such as optoelectronic integrated devices." @default.
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• W1974429162 date "1993-06-02" @default.
• W1974429162 modified "2023-10-18" @default.
• W1974429162 title "Selective growth of III-V semiconductor compounds by laser-assisted epitaxy" @default.
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• W1974429162 doi "https://doi.org/10.1088/0268-1242/8/6/018" @default.
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