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- W1974560892 abstract "We studied the oxide charges and traps within nitrided Hf-silicate (HfSiON)∕SiO2 gate stacks processed with high-temperature annealing with a spectroscopic technique by using high spatial resolution scanning capacitance microscopy. Spectroscopy was performed by detecting the static capacitance (dC∕dZ) between a conductive probe and the sample while sweeping the sample bias. The dC∕dZ image and spatially resolved dC∕dZ-V spectrum revealed the existence of positive fixed charges within HfSiON and interface trap charges between the SiO2 underlayer and Si substrate. We also observed a transient electron trap process from the conductive probe to the HfSiON film as abrupt discontinuities in the dC∕dZ-V spectrum and with bias-induced topography change of the HfSiON surface. These oxide charges and trap sites distribute inhomogeneously within HfSiON∕SiO2 gate stacks, and the origin of these charged defects is ascribable to phase separation induced by high-temperature postdeposition annealing." @default.
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- W1974560892 date "2007-04-15" @default.
- W1974560892 modified "2023-09-24" @default.
- W1974560892 title "Investigation of local charged defects within high-temperature annealed HfSiON∕SiO2 gate stacks by scanning capacitance spectroscopy" @default.
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- W1974560892 doi "https://doi.org/10.1063/1.2717600" @default.
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