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• W1974563116 abstract "In this work, n-channel Multi-gate FET TiN nanocrystal memory using p+ poly-Si gate and Al2O3 high-k blocking dielectric is demonstrated with good transistor characteristics and moderate high memory window for the first time. High endurance of only 3% window narrowing after 104 P/E cycles is demonstrated. The phenomenon and mechanism of erasing-first induced retention degradation are also reported." @default.
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• W1974563116 date "2008-04-01" @default.
• W1974563116 modified "2023-09-26" @default.
• W1974563116 title "High Endurance Multi-gate TiN Nanocrystal Memory Devices with High-k Blocking Dielectric and High Work Function Gate Electrode" @default.
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• W1974563116 doi "https://doi.org/10.1109/vtsa.2008.4530799" @default.
• W1974563116 hasPublicationYear "2008" @default.
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