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- W1974602178 abstract "The nucleation of dislocations from sharp corners acting as stress concentration sites on a silicon (100) surface is studied by a combination of atomistic and continuum modeling. Ledges of various heights, similar to those found in microelectronic devices, are considered. In this work we focus on the effect of ledge height and of ledge-ledge elastic interaction on the activation energy for dislocation nucleation. The activation energy decreases slightly with increasing the height of the ledge and has a more pronounced, nonmonotonic variation with the distance between stress concentration sites. The effect of introducing a radius of curvature at the root of the ledge is also studied. It is concluded that even a small radius of curvature renders the nucleation process similar to that from a flat surface of same crystallographic orientation." @default.
- W1974602178 created "2016-06-24" @default.
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- W1974602178 date "2010-08-01" @default.
- W1974602178 modified "2023-09-24" @default.
- W1974602178 title "Dislocation nucleation from interacting surface corners in silicon" @default.
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- W1974602178 doi "https://doi.org/10.1063/1.3471801" @default.
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