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- W1974694080 abstract "Abstract A series of experiments which aimed at improving the performance of field effect in a structure with a-Si:H prepared by dc sputtering has been carried out. The dielectric properties of an SiO 2 layer, used originally as an insulator, deteriorate during the deposition process. We succeeded in preparing a protective layer of SiN x deposited in situ . An increase of the source-drain current by three orders of magnitude in the improved structure is reported. Values of the field effect mobility are calculated from the temperature dependence of the field effect. The possibility for the improvement in performance of these structures is discussed." @default.
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- W1974694080 date "1985-02-01" @default.
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- W1974694080 title "Field effect in dc-sputtered a-Si:H in structure using SiNx prepared in situ" @default.
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- W1974694080 doi "https://doi.org/10.1016/0022-3093(85)90087-0" @default.
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