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• W1974721003 abstract "Si, Ge, and Be implantations were performed into (x11)A-oriented semi-insulating InP and GaAs substrates for x≤4. For comparison some of the implantations were also performed into (110)- and (100)-oriented substrates. For 200 keV/5×1013 cm−2 Si and 200 keV/3×1013 cm−2 Ge implants after 850 °C/7 s annealing, the InP is always n type with similar sheet resistance independent of the substrate orientation. No in-diffusion of Si or Ge was observed after annealing for any substrate orientation. Similar behavior was observed for Si implants in GaAs and for Si/B co-implants in both InP and GaAs. Photoluminescence measurements were performed on the Si- and Si/B-implanted InP and GaAs. For 30 keV/1.5×1014 cm−2 Be implants in both InP and GaAs, the in-diffusion of Be in (311)A-oriented substrates is less compared to the (100) material." @default.
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• W1974721003 date "1994-06-15" @default.
• W1974721003 modified "2023-09-26" @default.
• W1974721003 title "Ion implantation into (<i>x</i>11)<i>A</i>-oriented InP and GaAs (<i>x</i>≤4)" @default.
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• W1974721003 doi "https://doi.org/10.1063/1.356612" @default.
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