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• W1974920894 abstract "Electronic properties in Ga-doped (100) CdTe layers on (100) GaAs grown by atmospheric pressure metalorganic vapor phase epitaxy were studied. Triethylgallium was used as a dopant source. The source materials were dimethylcadmium (DMCd) and diethyltelluride (DETe). The effects of the DETe/DMCd (VI/II) ratio on the electrical properties were evaluated by Hall measurements. Electron concentration (300 K) was controlled from 3.5×1014 cm−3 to 2.5×1016 cm−3 by the VI/II ratio in the range 0.5 to 2. Higher growth temperature lowered the electron concentration. High electron mobility of 630 cm2/V s (300 K) was obtained for a growth temperature of 375 °C and a VI/II ratio of 2. Good correspondence was observed between electrical and photoluminescence (PL) properties. Both intensity and linewidth of a neutral-donor bound-exciton (D0,X) emission at 1.5932 eV increased with the electron concentration. The ionization energy of the Ga donor was estimated to be about 18 meV from electrical and PL properties. A Ga incorporation mechanism was deduced on the basis of the experimental results." @default.
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• W1974920894 date "1992-10-15" @default.
• W1974920894 modified "2023-09-24" @default.
• W1974920894 title "Electronic properties in Ga‐doped CdTe layers grown by metalorganic vapor phase epitaxy" @default.
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• W1974920894 doi "https://doi.org/10.1063/1.351412" @default.
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