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• W1975003214 endingPage "4169" @default.
• W1975003214 startingPage "4158" @default.
• W1975003214 abstract "We have utilized subpicosecond laser pulses to excite and probe hot electrons and nonequilibrium longitudinal-optical (LO) phonons in bulk GaAs by Raman scattering. We find that the photoexcited hot electrons cool at a rate much faster than predicted by intravalley scattering of LO phonons via the Frohlich interaction. On the other hand, this fast cooling rate can be accounted for satisfactorily by intervalley scattering. As a result of this very rapid cooling, the temperature of the hot LO phonons generated by the hot electrons temporarily overshoots the electron temperature. From the electron cooling curve and the dependence of the hot-phonon temperature on the excited-electron density, we determined the deformation potential for scattering between the ensuremath{Gamma} and L conduction-band valleys in GaAs." @default.
• W1975003214 created "2016-06-24" @default.
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• W1975003214 creator A5037869885 @default.
• W1975003214 date "1991-02-15" @default.
• W1975003214 modified "2023-09-27" @default.
• W1975003214 title "Hot-electron relaxations and hot phonons in GaAs studied by subpicosecond Raman scattering" @default.
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• W1975003214 doi "https://doi.org/10.1103/physrevb.43.4158" @default.
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