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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1975005504> ?p ?o ?g. }

• W1975005504 abstract "Abstract It has been known that a good quality h -BN layer can only be grown within a narrow temperature window of 1020–1100 K on a copper substrate. We found that the growth temperature window on Cu(111) surface could be lowered up to 100 K by ionizing and/or exciting borazine precursor gas with an electron-beam. The structures of a hexagonal boron nitride ( h -BN) layers grown at various substrate temperatures on a Cu(111) were examined using scanning tunneling microscopy. We found that the grown h -BN film exhibits highly inert behavior with wide bandgap semiconductor characteristics." @default.
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• W1975005504 date "2013-09-01" @default.
• W1975005504 modified "2023-09-24" @default.
• W1975005504 title "Electron-beam assisted growth of hexagonal boron-nitride layer" @default.
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• W1975005504 doi "https://doi.org/10.1016/j.cap.2013.04.018" @default.
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