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• W1975039443 abstract "When a high dose of As is implanted (e.g., 25 keV, 3×1015 cm−2) into B-doped Si and the sample is subsequently annealed at 900 °C/5 min, pronounced segregation of the B into the implanted region occurs. This creates a B-depleted region beyond the As profile. It is demonstrated that the B segregation is driven primarily by the implantation induced damage rather than by As-B chemical and/or by electric field effects. The B segregation is nearly complete after a relatively low temperature (≲600 °C/30 min) anneal. Two-dimensional device simulations show that the B depletion observed here can account for ≂50 mV threshold voltage roll off (at a drain bias of 0.1 V) in a Si metal–oxide–semiconductor field effect transistor of 0.2 μm gate length." @default.
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• W1975039443 date "1992-12-21" @default.
• W1975039443 modified "2023-09-28" @default.
• W1975039443 title "Boron redistribution in arsenic-implanted silicon and short-channel effects in metal–oxide–semiconductor field effect transistors" @default.
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• W1975039443 doi "https://doi.org/10.1063/1.108002" @default.
• W1975039443 hasPublicationYear "1992" @default.
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