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• W1975048626 abstract "The film thickness, chemical state, and polarization screening for a-SiN1.4 :H films deposited by glow discharge over hydrogenated amorphous silicon (a-Si:H) were determined by x-ray photoelectron spectroscopy (XPS) and Auger spectroscopy. The nitride films were observed to be single phase and the escape depth for 1400-eV electrons in the a-SiN1.4 :H film was determined to be 30 Å. The band offsets for the a-Si:H/a-SiN1.4 :H interface were determined by XPS and Bremsstrahlung isochromat spectroscopy (BIS) to be 1.2 eV for the valence band and 2.2 eV for the conduction band, while the band gap for a-SiN1.4 :H was found to be 5.3 eV in accordance with the optical gap. By combining optical absorption measurements with the valence-band density of states and conduction-band density of states determined by electron spectroscopy, a semiquantitative estimate of the band tailing within the nitride gap was obtained. Correlation of the defect absorption with the electron spin resonance measurements suggest that the dangling bond defect level in a-SiN1.4 :H lies approximately 2.5 eV from the nitride valence band and is, therefore, somewhat below the a-Si:H conduction band. This study has demonstrated that BIS is an effective technique for determining the conduction-band offsets in heterostructures without relying on valence-band offset or band-gap measurements." @default.
• W1975048626 created "2016-06-24" @default.
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• W1975048626 date "1987-04-15" @default.
• W1975048626 modified "2023-09-30" @default.
• W1975048626 title "Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offsets by electron spectroscopy" @default.
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• W1975048626 doi "https://doi.org/10.1063/1.337842" @default.
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