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- W1975048939 abstract "To modify SiO 2 dielectric surface of bottom-contact OTFT device, octadecyl-triethoxysilane (OTES) was used to find optimum condition of surface modification for triethoxysilane derivatives. Either spin-coating method or solution dipping method was applied to modify the dielectric surface with OTES. Optimization process was performed with varying solution concentration, reaction time and so on. Through surface modification of OTFT, 0.01-0.04cm2/V/s of hole mobilities were observed depending on modification conditions." @default.
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- W1975048939 date "2003-01-01" @default.
- W1975048939 modified "2023-09-26" @default.
- W1975048939 title "CHEMICAL MODIFICATION OF GATE DIELECTRIC SURFACES IN ORGANIC THIN FILM TRANSISTOR (OTFT) THROUGH MOLECULAR SELF-ASSEMBLY" @default.
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- W1975048939 doi "https://doi.org/10.1080/15421400390263523" @default.
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