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- W1975065970 abstract "Experimental data concerning the electrical conduction and Hall coefficient in HgTe samples with acceptor states have been collected and analysed. In the analysis three ranges of acceptor concentration have been distinguished: a low concentration range up to about 5 × 1015 cm−3 (pure samples), a high concentration range from 1016 to 1018 cm−3 (p-like samples), and an extremely high concentration range above 1018 cm−3 (p-type samples). In pure HgTe samples the holes are in the valence band, in p-like samples the “holes” are in the impurity band, and in p-type HgTe samples the holes are in a strong mixing impurity-valence band. The mobility of holes in the valence band is of the order of 105cm2Vs. The mobility of “holes” in the impurity band decreases with increasing impurity concentration from about 5 × 103cm2Vs to 125cm2Vs. The mobility of holes in p-type HgTe samples is independent of the acceptor concentration and is equal to 125cm2Vs." @default.
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- W1975065970 date "1984-01-01" @default.
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- W1975065970 title "Hole mobility in p-type HgTe" @default.
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- W1975065970 doi "https://doi.org/10.1016/0022-3697(84)90106-9" @default.
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