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- W1975072712 abstract "We have investigated the charge collection condition around voids in copper indium gallium sulfur selenide (CIGSSe) solar cells fabricated by sputter and a sequential process of selenization/sulfurization. In this study, we found direct evidence of void passivation by using the junction electron beam induced current method, transmission electron microscopy, and energy dispersive X-ray spectroscopy. The high sulfur concentration at the void surface plays an important role in the performance enhancement of the device. The recombination around voids is effectively suppressed by field-assisted void passivation. Hence, the generated carriers are easily collected by the electrodes. Therefore, when the S/(S + Se) ratio at the void surface is over 8% at room temperature, the device performance degradation caused by the recombination at the voids is negligible at the CIGSSe layer." @default.
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- W1975072712 date "2015-02-23" @default.
- W1975072712 modified "2023-10-01" @default.
- W1975072712 title "Direct evidence of void passivation in Cu(InGa)(SSe)2 absorber layers" @default.
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- W1975072712 doi "https://doi.org/10.1063/1.4913612" @default.
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