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- W1975526359 abstract "Backscattering of 4He-ions has been used to study the radiation damage as a function of annealing temperature in GaAs single crystals implanted with 40 keV Sn atoms at room temperature and 400°C. The doses varied between 1014and 1015ions/cm2. The annealing characteristics for the room temperature implantations were similar to those reported for the recovery of the electrical conductivity in electron irradiated GaAs. The lattice site location of the implanted Sn atoms has also been investigated by the backscattering technique and for large doses 40 to 60% of the Sn atoms have been found to be substitutional. The lattice location does not seem to change in the temperature range 200 to 650°C. Durch Rückstreuung von 4He-Ionen wurde das Strahlungsdamage in Abhängigkeit von der Temperungstemperatur in mit 40 keV Sn-Atomen bei Zimmertemperatur und 400°C implantierten GaAs-Einkristallen untersucht. Die verwendeten Dosen lagen zwischen 1014 und 1015 Ionen/cm2. Die Temperungscharakteristiken für Implantation bei Zimmertemperatur sind den Erholungskurven der elektrischen Leitfähigkeit in elektronenbestrahltem GaAs ähnlich. Die Gitterplatzlokalisierung der implantierten Sn-Atome wurden ebenfalls mit der Rückstreuungstechnik untersucht, und es wurde gefunden, daß für große Dosen 40 bis 60% der Sn-Atome Substitutionsstörstellen sind. Die Gitterlokalisierung scheint sich im Temperaturbereich von 200 bis 650°C nicht zu ändern." @default.
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- W1975526359 date "1974-10-16" @default.
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- W1975526359 title "Annealing characteristics and lattice site location of 40 keV Sn implantations in GaAs" @default.
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- W1975526359 doi "https://doi.org/10.1002/pssa.2210250218" @default.
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