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- W1975621585 abstract "A 3D Monte Carlo (MC) device simulation model is developed for the treatment of discrete random dopant distribution in sub-100 nm MOSFET. The electron–ion (e–i) interaction model is based on a suitable description of long-range Coulomb interaction included by a particle–mesh (PM) calculation method and short-range interaction taken into account by a scattering mechanism. Attention is given to the correct definition of the short-range domain and scattering model. This new approach is validated by computing the low-field electron drift mobility in Si by means of MC simulation of 3D resistors in the doping concentration range of 1015–6.4×1019 cm−3. A good agreement is found between calculation and experimental data at 300 K." @default.
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- W1975621585 date "2002-07-01" @default.
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- W1975621585 title "Short-range and long-range Coulomb interactions for 3D Monte Carlo device simulation with discrete impurity distribution" @default.
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- W1975621585 doi "https://doi.org/10.1016/s0038-1101(02)00042-4" @default.
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