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• W1975648587 abstract "Silicon optical modulators have generated an increasing interest in the recent years, as their performances arecrucial to achieve high speed optical links. Their evolutions are presented, from the first demonstrations to thelatest developments on optical modulators integrated in waveguides. Among possibilities to achieve opticalmodulation in silicon-based materials, the carrier depletion effect has demonstrated good performances. Recentresults on high speed and low loss silicon optical modulator are presented. Free carrier-concentration-variationeffect is used in PIN diode. Carriers are depleted when the diode is reverse biased, leading to refractive indexvariations. This device presents a low capacitance which allows the reduction of RC time constant and powerconsumption. A Mach-Zehnder interferometer with few mm-long phase shifter is used to convert the effectiveindex variation into intensity modulation. Performance comparison between PN, PIN and PIPIN diodes arediscussed and characteristics of PIPIN diodes are presented." @default.
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• W1975648587 date "2010-02-11" @default.
• W1975648587 modified "2023-09-25" @default.
• W1975648587 title "High speed silicon optical modulator" @default.
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• W1975648587 doi "https://doi.org/10.1117/12.841092" @default.
• W1975648587 hasPublicationYear "2010" @default.
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