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• W1975690147 abstract "We adapt the spin accumulation model of the perpendicular transport in metallic magnetic multilayers to the issue of spin injection from a ferromagnetic metal (F) into a semiconductor (N). We show that the problem of the conductivity mismatch between F and N can be solved by introducing a spin dependent interface resistance (tunnel junction preferably) at the $F/N$ interfaces. In the case of a $F/N/F$ structure, a significant value of the magnetoresistance can be obtained if the junction resistance at the $F/N$ and $N/F$ interfaces is chosen between two threshold values depending on the resistivity, spin diffusion length and thickness of N. The problem is treated for various geometries (vertical or lateral $F/N/F$ structures)." @default.
• W1975690147 created "2016-06-24" @default.
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• W1975690147 creator A5055262951 @default.
• W1975690147 date "2001-10-19" @default.
• W1975690147 modified "2023-10-10" @default.
• W1975690147 title "Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor" @default.
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• W1975690147 doi "https://doi.org/10.1103/physrevb.64.184420" @default.
• W1975690147 hasPublicationYear "2001" @default.
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