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- W1975777748 abstract "Abstract We investigate the effect of phosphorus doping on the atomic structure of B-related defects in crystalline Si through first-principles pseudopotential calculations. We find that a B–P complex is the most stable defect, with a binding energy of about 0.3 eV , compared with isolated B and P ions. When Si self-interstitials (Is) are generated by ion implantation, B and P dopants form an Is–B–P complex. The stability of the Is–B–P complex is greatly enhanced as the Fermi level increases, compared with the Is–B complex. The formation of the B–P and Is–B–P complexes is suggested to be responsible for the suppression of B diffusion in Si predoped with donor impurities." @default.
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- W1975777748 date "2003-12-01" @default.
- W1975777748 modified "2023-10-16" @default.
- W1975777748 title "First-principles study of the atomic structure of B-related defects in crystalline Si predoped with phosphorus" @default.
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- W1975777748 doi "https://doi.org/10.1016/j.physb.2003.09.135" @default.
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