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- W1975827943 abstract "Mask undercut in the time-multiplexed deep silicon etch process is becoming an increasingly significant issue as it is used to produce smaller critical dimension features. Models of the process must contain the necessary physics to reproduce the dependencies of mask undercut. We argue that the reason undercut develops is the dependence of the deposition step on ion flux. Our experiments of C4F8 (and CHF3 not shown) plasmas show that the film growth is dominantly ion-enhanced. This leads naturally to a mask undercut that increases in time. A more neutral flux dominant deposition step would result in reduced mask undercut." @default.
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- W1975827943 date "2011-04-18" @default.
- W1975827943 modified "2023-10-17" @default.
- W1975827943 title "Mask undercut in deep silicon etch" @default.
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